Under CopyrightBurenkov, AlexAlexBurenkovBaer, EberhardEberhardBaerLorenz, JuergenJuergenLorenzKampen, ChristianChristianKampen2022-03-1112.10.20122012https://publica.fraunhofer.de/handle/publica/37661010.24406/publica-fhg-376610Performance variations of a 6-transistor SRAM cell were analyzed using coupled process, device, and circuit simulation. The propagation of process-induced variations to device and circuit performance was simulated. Variation sources from lithography, etching, and temperature profiles in rapid thermal annealing were considered and correlations between variations and performance parameters were studied.enSRAMprocess variationSOI MOSFETcorrelationsimulation670620530presentation