Hurm, V.V.HurmBenz, W.W.BenzBerroth, M.M.BerrothFink, T.T.FinkFritzsche, D.D.FritzscheHaupt, M.M.HauptHofmann, P.P.HofmannKöhler, KlausKlausKöhlerLudwig, M.M.LudwigMause, K.K.MauseRaynor, B.B.RaynorRosenzweig, JosefJosefRosenzweig2022-03-092022-03-091994https://publica.fraunhofer.de/handle/publica/32215910.1109/IEDM.1994.383258The first 1.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAS HEMTs grown on a GaAs substrate has been fabicated. At each differntial output the transimpedance is 26.8 komega. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.enInGaAs-MSM-Photodiodelangwelliger Empfängerlong-wavelength receiveroptoelectronicsOptoelektronik621667conference paper