Habenicht, HolgerHolgerHabenichtGundel, PaulPaulGundelMchedlidze, T.T.MchedlidzeKittler, M.M.KittlerColetti, GianlucaGianlucaColettiWarta, WilhelmWilhelmWarta2022-03-101.9.20122008https://publica.fraunhofer.de/handle/publica/36165410.4229/23rdEUPVSEC2008-2DV.1.2910.24406/publica-r-361654Silicon samples intentionally contaminated with iron during growth were investigated in the as-grown state and after a prolonged low temperature anneal at around 300°C with different characterisation techniques, i.e. Deep Level Transient Spectroscopy (DLTS), Temperature Dependent Lifetime Spectroscopy (TLDS) and Photoluminescence (PL) spectroscopy. A defect transformation was found, changing the type of defect from iron-related complexes to interstitial iron.en621conference paper