Under CopyrightHensel, AndreasAndreasHenselArmbruster, CorneliusCorneliusArmbrusterRouffaud, GillesGillesRouffaud2022-03-1401.11.20192018https://publica.fraunhofer.de/handle/publica/40239710.24406/publica-fhg-402397A microinverter with GaN transistors is presented in this work. It consists of two stages: a DC-DC-stage with HF galvanic isolation in combination with an inverter stage. High efficiency above 97.5 % is reached in all stages. The weight of the demonstrator developed is 492 gr at 675 cm³.engallium nitride (GaN)ModulwechselrichterMicroinverterWide-Band-GapEnergiesystemtechnikLeistungselektronik621697Galvanical isolated microinverter with GaN transistors for photovoltaic modulesconference paper