Müller, J.J.MüllerBöscke, T.S.T.S.BösckeMüller, S.S.MüllerYurchuk, E.E.YurchukPolakowski, P.P.PolakowskiPaul, J.J.PaulMartin, D.D.MartinSchenk, T.T.SchenkKhullar, K.K.KhullarKersch, A.A.KerschWeinreich, W.W.WeinreichRiedel, S.S.RiedelSeidel, K.K.SeidelKumar, A.A.KumarArruda, T.M.T.M.ArrudaKalinin, S.V.S.V.KalininSchlösser, T.T.SchlösserBoschke, R.R.BoschkeBentum, R. vanR. vanBentumSchröder, U.U.SchröderMikolajick, T.T.Mikolajick2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38354710.1109/IEDM.2013.6724605With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.en621conference paper