Kunzel, H.H.KunzelBochnia, R.R.BochniaGibis, R.R.GibisHarde, P.P.HardePassenberg, W.W.Passenberg2022-03-032022-03-031990https://publica.fraunhofer.de/handle/publica/17941510.1007/BF00324734Acceptor doping of MBE grown Ga0.47In0.53As on InP:Fe substrates utilizing manganese is investigated as an alternative for overcoming problems related to beryllium doping. The incorporation behaviour of manganese is analyzed in detail with respect to its application in optoelectronic device structures. Special emphasis is put on low-level and maximum-level doping relevant for use in buffer and contact layers, respectively. The dependence of activation energy and the degree of ionization on acceptor concentration is determined. At high doping levels the free-hole concentration is markedly lower than the doping concentration. It is attributed to the diffusion of acceptor species across the heterointerface in the substrate. Manganese diffusion is demonstrated to be an important effect for the interpretation of the measured results. Manganese doping is applied in p+/n/p--layer structures for junction field effect transistor applications. The intended abruptness of acceptor profiles is deteriorated by diffusion of manganese in the Ga0.47In0.53As material. The degraded device characteristics obtained are attributed to the acceptor diffusion behaviour established.endiffusion in solidsdoping profilesgallium arsenideiii-v semiconductorsindium compoundsmanganesesemiconductor dopingsemiconductor epitaxial layerssemiconductoracceptor dopingbuffer layersp+-n-p- layer structurembe grownoptoelectronic device structurescontact layersactivation energydegree of ionizationfree-hole concentrationheterointerfacediffusionjunction field effect transistor applicationsdegraded device characteristicsga0.47in0.53asGaInAs-InP621journal article