Falster, R.R.FalsterPagani, M.M.PaganiGambaro, D.D.GambaroCornara, M.M.CornaraOlmo, M.M.OlmoFerrero, G.G.FerreroPichler, P.P.PichlerJacob, M.M.Jacob2022-03-032022-03-031997https://publica.fraunhofer.de/handle/publica/191503The influence of vacancy concentration on oxygen nucleation/precipitation kinetics in CZ silicon has been studied. Vacancies have been injected into the wafer bulk by thermal nitridation of the surface. This treatment causes oxygen precipitation enhancement. Vacancy-.rich material is also characterized by a significant formation of oxygen precipitates at low temperatures, even in material in which the as-grown oxygen precipitates have been suppressed. Finally, experimental evidence is presented that vacancies are consumed during the nucleation process.enGitterleerstellennitridationPunktdefekteSauerstoffpräzipitationsilicium670620530669journal article