Pre-deposition interfacial oxidation and post-deposition interface nitridation of LPCVD TEOS used as gate dielectric on 4H-SiC

Under CopyrightLim, MinwhoMinwhoLimSledziewski, TomaszTomaszSledziewskiRommel, MathiasMathiasRommelErlbacher, TobiasTobiasErlbacherKim, Hong-KiHong-KiKimKim, SeongjunSeongjunKimShin, Hoon-KyuHoon-KyuShinBauer, AntonAntonBauer2022-03-1424.10.20192019https://publica.fraunhofer.de/handle/publica/40540310.24406/publica-fhg-405403en670620530Pre-deposition interfacial oxidation and post-deposition interface nitridation of LPCVD TEOS used as gate dielectric on 4H-SiCposter