Huth, S.S.HuthBreitenstein, O.O.BreitensteinHuber, A.A.HuberDanz, D.D.DanzLambert, U.U.LambertAltmann, F.F.Altmann2022-03-032022-03-032002https://publica.fraunhofer.de/handle/publica/20265810.4028/www.scientific.net/SSP.82-84.741A novel non-destructive and non-contacting technique for the spatially resolved detection of small leak-age currents in electronic devices and MOS materials is presented. Highly-sensitive lock-in infrared (IR-) thermography is used to localize leak-age current induced temperature variations down to 10 muK at a lateral resolution down to 5 mum. Leakage currents of about 1 mA can be localized within seconds and some muA may be detected after less than 1 h measurement.en531620669journal article