Wienhausen, A.H.A.H.WienhausenKranzer, DirkDirkKranzer2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38051210.4028/www.scientific.net/MSF.740-742.1123Gallium Nitride (GaN) is known to provide the opportunity of producing power transistors with remarkable electrical properties, such as low on-state resistance and low switching energies. This paper demonstrates how the use of GaN power transistors along with the possibility of raising the switching frequency can lead to a significant reduction of volume, weight and production costs of a power converter while maintaining high efficiency. A 1 kW resonant LLC converter using 600 V GaN power transistors is presented.en621conference paper