Hurm, V.V.HurmBenz, W.W.BenzBerroth, M.M.BerrothFink, T.T.FinkFritzsche, D.D.FritzscheHaupt, M.M.HauptHofmann, P.P.HofmannKöhler, KlausKlausKöhlerLudwig, M.M.LudwigMause, K.K.MauseRaynor, B.B.RaynorRosenzweig, JosefJosefRosenzweig2022-03-032022-03-031995https://publica.fraunhofer.de/handle/publica/18574210.1049/el:199500042-s2.0-0029636107The first 1.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAS HEMTs grown on a GaAs substrate has been fabicated. At each differntial output the transimpedance is 26.8 komega. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.enHEMTInGaAs-MSM-Photodiodeintegrated optoelectronicsmetal-semiconductor-metal structuresoptical receiversoptoelectronicsOptoelektronikphotodiodes621667384journal article