Lisauskas, A.A.LisauskasReklaitis, A.A.ReklaitisVenckevicius, R.R.VenckeviciusKasalynas, I.I.KasalynasValusis, G.G.ValusisGrigaliunaite-Vonseviciene, G.G.Grigaliunaite-VonsevicieneMaestre, H.H.MaestreSchmidt, J.J.SchmidtBlank, V.V.BlankThomson, M.D.M.D.ThomsonRoskos, H.G.H.G.RoskosKöhler, KlausKlausKöhler2022-03-042022-03-042011https://publica.fraunhofer.de/handle/publica/22444610.1063/1.3561642The pulsed optoelectronic terahertz emitter based on a d-doped p-i-n-i GaAs/Al(x)Ga(1-x)As heterostructure, which was suggested by Reklaitis [ Phys. Rev. B 77, 153309 (2008)] , is investigated experimentally. It is shown that the heterostructure can serve as efficient antenna- and bias-free surface emitter. Its power exceeds the emission from InGaAs and InAs surfaces for optical excitation fluences below 0.7 µJ/cm(2) at 82 MHz pulse repetition rate, respectively, 7 µJ/cm(2) at 1 kHz, with potential for further improvement by carrier recombination management.en667621journal article