Umbach, A.A.UmbachTrommer, D.D.TrommerSteingrüber, R.R.SteingrüberSeeger, A.A.SeegerEbert, W.W.EbertUnterborsch, G.G.Unterborsch2022-03-032022-03-032001https://publica.fraunhofer.de/handle/publica/20046310.1023/A:1017510004058High-speed, high-power photodetectors are required in 40 Gbit/s front-ends as well as for optic/millimeterwave-conversion in 60 GHz broadband mobile systems. The demand for a high bandwidth maintained up to high power levels is fulfilled by waveguide-integrated p-i-n diodes on InP. These photodetectors exhibit a cutoff frequency above 50 GHz. By monolithic integration of a spot size transformer a responsivity of 0.7 A/W is achieved and the fiber alignment tolerances are increased by one order of magnitude. Linear power behaviour up to +12 dBm at 50 GHz and maximum output voltage swings of 1 V are demonstrated.enhigh-speed optical techniquesinfrared detectorsmicrowave photonicsoptical frequency conversionoptical planar waveguidesp-i-n photodiodesphotodetectorshigh-speed high-power photodetectorshigh-power photodetectors40 Gbit/s front-endsbandwidthoptic/millimeterwave-conversionhigh bandwidthhigh power levelswaveguide-integrated p-i-n diodesinpcutoff frequencymonolithic integrationspot size transformerresponsivityfiber alignment toleranceslinear power behaviourmaximum output voltage swings40 Gbit/s60 GHz50 GHz621535journal article