Esquivias, I.I.EsquiviasWeisser, S.S.WeisserRomero, B.B.RomeroTasker, P.J.P.J.TaskerRalston, J.D.J.D.RalstonRosenzweig, JosefJosefRosenzweigArias, J.J.Arias2022-03-092022-03-091994https://publica.fraunhofer.de/handle/publica/322287encarrier escape timehigh-frequency impedanceHochfrequenzimpedanzInGaAs/GaAsLadungsträgeremissionszeitMQW621667Carrier transport effects in undoped In(0.35)Ga(0.65)As/GaAs MQW lasers determined from high-frequency impedance measurementsBestimmung von Ladungsträger-Transporteigenschaften in undotierten In(0.35)Ga(0.65)As/GaAs-MQW-Lasern aus Hochfrequenz-Impedanzmessungenconference paper