Model for the electronic stopping of channeled ions in silicon around the stopping power maximum

Simionescu, A.A.SimionescuHobler, G.G.HoblerBogen, S.S.BogenFrey, L.L.FreyRyssel, H.H.Ryssel2022-03-032022-03-031995https://publica.fraunhofer.de/handle/publica/18666610.1016/0168-583X(95)00676-1en670620530539Model for the electronic stopping of channeled ions in silicon around the stopping power maximumjournal article