Study of the ambipolar carrier expansion in silicon by an optical time-of-flight method

Axmann, A.A.AxmannLaurich, B.B.LaurichForchel, A.A.ForchelHillmer, H.H.HillmerHoai, T.X.T.X.Hoai2022-03-022022-03-021984https://publica.fraunhofer.de/handle/publica/171353enambipolare TrägerausbreitungFlugzeitmessung621667Study of the ambipolar carrier expansion in silicon by an optical time-of-flight methodbook article