Krugel, GeorgGeorgKrugelSharma, A.A.SharmaWolke, WinfriedWinfriedWolkeRentsch, JochenJochenRentschPreu, RalfRalfPreu2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23310410.1002/pssr.201307153Stacks of aluminum oxide and silicon nitride are frequently used in silicon photovoltaics. In this Letter, we demonstrate that hydrogenated aluminum nitride can be an alternative to this dual-layer stack. Deposited on 1 ohm cm p-type FZ silicon, very low effective surface recombination velocities of 8 cm/s could be reached after firing at 820 °C. This excellent passivation is traced back to a high density of fixed charges at the interface of approximately -1 × 1012 cm-2 and a very low interface defect density below 5 × 1010 eV-1 cm-2. Furthermore, spectral ellipsometry measurements reveal that these aluminum nitride layers have ideal optical properties for use as anti-reflective coatings.enPV Produktionstechnologie und QualitätssicherungSilicium-PhotovoltaikCharakterisierung von Prozess- und Silicium-MaterialienOberflächen - KonditionierungPassivierungLichteinfangPilotherstellung von industrienahen SolarzellenProduktionsanlagen und Prozessentwicklungpassivationsputteringnitride621530journal article