Manger, M.M.MangerBatke, E.E.BatkeKöhler, KlausKlausKöhlerGanser, P.P.Ganser2022-03-092022-03-091999https://publica.fraunhofer.de/handle/publica/333182The cyclotron mass of a high-density electron inversion layer in GaAs was investigated at a lattice temperature of 0.4 K. A novel mass minimum is observed in the metallic regime at a filling factor of about 2.3 providing strong evidence that electron correlations influence the cyclotron resonance.enIII-V HalbleiterIII-V semiconductorsQuantenfilmquantum wellselectrical measurementelektrische Messung621667conference paper