Kreutzer, O.O.KreutzerBillmann, M.M.BillmannMärz, M.M.März2022-03-142022-03-142018https://publica.fraunhofer.de/handle/publica/407729Within this paper the switching losses of a Wolfspeed 25mOhm bare die SiC-MOSFET are measured in a hard switching 800 V DCDC-converter with five different commutation partners. A small and a large SiC Schottky diode, an SiC-MOSFET body diode and a combination of body and Schottky diode are compared at different switching speeds and switching currents. The results show quite well the reverse recovery charge dependence of SiC-MOSFET's body diode on switching speed. In contrast to common electric measurements where losses are calculated, the calorimetric measurements reveal exactly what shall be quantified: The temperature rise of the switching MOSFET.en670620530conference paper