Xiao, D.D.XiaoRamsay, E.E.RamsayReid, D.T.D.T.ReidOffenbeck, B.B.OffenbeckWeber, N.N.Weber2022-03-032022-03-032006https://publica.fraunhofer.de/handle/publica/21172810.1063/1.2180446By using the electric-field-induced second-harmonic generation effect, we have detected electrical signals present on a complementary metal-oxide-semiconductor (CMOS) integrated circuit in a noncontact geometry. Femtosecond pulses with a wavelength of 2.16 mu m were incident on the device and the second harmonic at 1.08 mu m exhibited a field-dependent behavior. The conversion efficiency from the fundamental to the second harmonic was estimated to be -103 dB.en621Optical probing of a silicon integrated circuit using electric-field-induced second-harmonic generationjournal article