Ghaderi, K.K.GhaderiHobler, G.G.HoblerBudil, M.M.BudilPötzl, H.H.PötzlPichler, P.P.PichlerRyssel, H.H.RysselHansch, W.W.HanschEisele, I.I.EiseleTian, C.C.TianStingeder, G.G.Stingeder2022-03-092022-03-091994https://publica.fraunhofer.de/handle/publica/323123In this work, we describe a general model for dopant diffusion via dopant-defect pairs assuming local equilibrium for electronic processes, but not for the pairing processes. A series of experiments containing four dopant species in the buried layer and phosphorus in the top layer has been carried out and simulated in order to obtain a parameter set for the pair diffusion model. From the diffusion of the buried dopants, the fractional interstitials component f sub1 of B, As and Sb has been determined as f subIB = 0.67, f subIAs = 0.27-0.3, f sub ISb = 0.01, assuming f subIP = 1, in good agreement with previously known values. With the same set of parameters, OED has been successfully simulated. However, phosphorus diffusion experiments published in the literature could only be simulated with a different parameter set as compared with that obtained by the simulation of our experiments. The self-diffusion coefficients D subI C eq/I and D subV C eq/V are in both sets in the order of those proposed by Tan and Gösele.enAntimonArsenBorDiffusionsmechanismusPhosphorsilicium670620530conference paper