Engel, T.T.EngelStrittmatter, A.A.StrittmatterPassenberg, W.W.PassenbergSeeger, A.A.SeegerSteingrüber, R.R.SteingrüberMekonnen, G.G.G.G.MekonnenUnterborsch, G.G.UnterborschBimberg, D.D.Bimberg2022-03-092022-03-091998https://publica.fraunhofer.de/handle/publica/33182310.1109/LEOS.1998.737740We report on our recent results on the monolithic integration of InP-based narrow band photoreceiver OEICs for 1.55 mu m working in the 60 GHz range. These OEICs were achieved by successive improvement of the design and fabrication techniques used for OEICs working in the 38 GHz regime. The OEICs combine two types of high-speed devices, a top-illuminated InGaAs-InP metal-semiconductor-metal photodetector (MSM PD) with 0.2 mu m feature and 0.15 mu m high-electron-mobility-transistors (HEMT) based on InGaAs-InAlAs-InP.engallium arsenideHEMT integrated circuitsiii-v semiconductorsindium compoundsintegrated optoelectronicsmetal-semiconductor-metal structuresmicrowave photonicsmmicoptical design techniquesoptical fabricationoptical receiversphotodetectorsnarrow band photoreceiver oeicsinpoptical designGHz rangehigh-speed devicestop-illuminated InGaAs-InP metal-semiconductor-metal photodetectorhigh-electron-mobility- transistorsInGaAs-inalas-InPHEMT1.55 mum0.2 mumInGaAs-InP621conference paper