Le, Quang HuyQuang HuyLeHuynh, Dang KhoaDang KhoaHuynhLehmann, SteffenSteffenLehmannZhao, ZhixingZhixingZhaoSchwan, Christoph T.Christoph T.SchwanKämpfe, ThomasThomasKämpfeRudolph, MatthiasMatthiasRudolph2023-08-222023-08-222023https://publica.fraunhofer.de/handle/publica/44854110.1109/SiRF56960.2023.100462102-s2.0-85149414920This paper presents the modeling and analysis of the high-frequency noise in 22-nm FDSOI CMOS technology. Experimental noise parameters up to 170 GHz of a multi-finger n-channel transistor are extracted by utilizing the tuner-based method. The Pucel (PRC) noise model is applied and validated for prediction of 22-nm FDSOI noise characteristics from low frequencies to D-band frequencies. In addition, extraction and analysis of the model parameters versus drain current at the W-band frequency 94 GHz are demonstrated.en22 nmFDSOImm-wavenoisePucel modelconference paper