Su, L.M.L.M.SuGrote, N.N.GroteKaumanns, R.R.KaumannsSchroeter, H.H.Schroeter2022-03-022022-03-021985https://publica.fraunhofer.de/handle/publica/17318710.1063/1.963922-s2.0-0942277642Double-heterojunction bipolar transistors have been fabricated on InGaAs(P)/InP with current gains of up to 200. Transistors with a p+-InGaAs/N-InP base/collector junction exhibited drastic gain reduction at low collector bias voltages which is ascribed to the electron repelling effect of the conduction-band spike formed at the collector heterojunction. To overcome this complication a thin n-InGaAs transition layer was inserted between the ternary base and the InP wide-gap collector. The resulting nN double-layer collector structure leads to excellent current/voltage characteristics.enbipolar transistorsgallium arsenideiii-v semiconductorsindium compoundssemiconductorsn p n n double-heterojunction bipolar transistorInGaAsp/InPcurrent gainsp+-InGaAs/ n-InP base/collector junctiongain reductionelectron repelling effectconduction-band spikethin n-InGaAs transition layerternary baseInP wide-gap collectorn n double-layer collector structurecurrent/voltage characteristics621journal article