Hofmann, MarcMarcHofmannWagenmann, DirkDirkWagenmannTeßmann, ChristopherChristopherTeßmannJäcklein, MartinMartinJäckleinSaint-Cast, PierrePierreSaint-CastEberlein, DirkDirkEberleinKraft, AchimAchimKraftDippell, TorstenTorstenDippellMay, FrankFrankMayDörr, ManfredManfredDörrCord, BernhardBernhardCordSchütte, ThomasThomasSchütteNeiß, PeterPeterNeißEichhorn, LutzLutzEichhornKlick, MichaelMichaelKlickRichter, UweUweRichterSiemers, MichaelMichaelSiemersWiedemuth, PeterPeterWiedemuth2022-03-146.12.20182018https://publica.fraunhofer.de/handle/publica/40260510.24406/publica-r-40260510.4229/35thEUPVSEC20182018-2BO.4.2Very thin aluminum oxide passivation films (3.7 nm) are developed using ICP PECVD and applying plasma simulation (particle-in-cell Monte Carlo method), in-situ plasma characterization (spectroscopic plasma monitoring, self-excited electron plasma resonance spectroscopy, laser ellipsometry) and ex-situ layer analysis (lifetime and density of interface traps investigation). The thin (3.7 nm) AlOx films are applied to PERC-type solar cells reaching 21% efficiency slightly outperforming solar cells applying standard 15 nm AlOx layers. All solar modules manufactured applying the 3.7 nm thin AlOx passivation layer successfully passed standard damp-heat and thermal-cycling tests proving the applicability of the novel technology.enpassivationPECVDAlOxplasma monitoringPERCPlasmatechnologiePhotovoltaikSilicium-PhotovoltaikOberflächen: KonditionierungPassivierungLichteinfangmonitoringPV modulesilicon solar cellconference paper