Weisser, S.S.WeisserEsquivias, I.I.EsquiviasGallagher, D.F.G.D.F.G.GallagherTasker, P.J.P.J.TaskerFleissner, J.J.FleissnerLarkins, E.C.E.C.LarkinsRalston, J.D.J.D.RalstonRosenzweig, JosefJosefRosenzweig2022-03-082022-03-081992https://publica.fraunhofer.de/handle/publica/320106Vertically-compact high-speed GaAs/Alsub0.25Gasub0.75As and Insub0.35Gasub0.65As/GaAs multiple quantum well (MQW) lasers designed for monolithic integration with MODFET-based circuits are compared. 3 dB modulation bandwidths of 16 GHz and 21 GHz, respectively, are demonstrated.endifferential gaindifferentieller Gewinnhigh-speed laserHochgeschwindigkeitslasermodulation responseModulationsantwortmonolithic integrationmonolithische Integrationpseudomorphes InGaAspseudomorphic InGaAsquantum wellsstrained layerverspannte Schicht621667Performance comparison of high-speed GaAs/Al0.25Ga0.75As and In0.35Ga0.65As/GaAs multiple quantum well lasers suitable for monolithic integration.Performance-Vergleich von Hochgeschwindigkeits-GaAs/Al0.25Ga0.75As und In0.35Ga0.65As/GaAs Multiple-Quantum-Well-Lasern, die für monolithische Integration geeignet sindconference paper