Tessmann, AxelAxelTessmannHaydl, W.H.W.H.HaydlNeumann, M.M.NeumannKudszus, S.S.KudszusHülsmann, A.A.Hülsmann2022-03-092022-03-091999https://publica.fraunhofer.de/handle/publica/33257110.1109/EUMA.1999.338319A two-stage monolithic W-band power amplifier has been developed, using 0.15 mu AlGa.As/InGaAs/GaAs dual-gate PM-HEMTs. The amplifier demonstrates a small signal gain of 15 dB and a maximum output power of 57 mW with an associated gain of 6 dB at 94 GHz. The circuit consists of two amplifier stages with a total gate width of 0.36 mm in the output stage. The use of coplanar technology and dual-gate HEMTs results in an over-all chip size of only 1 x2 mm2.encascodecoplanardual-gateKaskadekoplanarLeistungsverstärkerMMICMPAW-band621667conference paper