Chlebek, J.J.ChlebekHuber, H.-L.H.-L.HuberOertel, H.H.OertelDammel, R.R.DammelLingnau, J.J.LingnauTheis, J.J.TheisWeiß, M.M.Weiß2022-03-022022-03-021989https://publica.fraunhofer.de/handle/publica/176902There is an increasing need for computer-aided lithography simulation and modelling in IC manufacture. Software programs are well-established tools in simulating the problems affecting line-edge profiles for different exposure arrangements and development processes. The simulation program XMAS (X-Ray Lithography Modelling and Simulation) is designed to evaluate a large variety of exposure and development situations in X-ray lithography. After the imaging procedure, a simulation of the development process can be performed resulting in two or three-dimensional resist profiles at various stages in the process. Results are presented concerning the development behaviour of standard and experimental positive three-component-system (3CS) resists as well as experimental negative tone resists. The influence of secondary electrons backscattered from different substrate layers is investigated. The algorithm for three-dimensional development based on a ray-tracing formalism is described.en621journal article