Hannak, R.M.R.M.HannakOestreich, M.M.OestreichHeberle, A.P.A.P.HeberleRühle, W.W.W.W.RühleKöhler, KlausKlausKöhler2022-03-032022-03-031995https://publica.fraunhofer.de/handle/publica/18610510.1016/0038-1098(94)00784-5Spin quantum beats are detected in GaAs/Al subx Ga sub1-x As quantum wells in a magnetic field perpendicular to the growth direction by picosecond time-resolved photoluminescence spectroscopy. We directly determine the electron Lande g factor as a function of well width from 1 to 20 nm with unprecedented accuracy which makes quantitative comparison with theory possible.enIII-V HalbleiterIII-V semiconductorsspin dynamicstime resolved photoluminescence621667530Electron g factor in quantum wells determined by spin quantum beatsElektronen g-Faktor in Quantum Wells, bestimmt mittels Spin Quanten Schwebungenjournal article