Mikulla, MichaelMichaelMikullaBenz, W.W.BenzChazan, P.P.ChazanDaleiden, J.J.DaleidenFleissner, J.J.FleissnerKaufel, G.G.KaufelLarkins, E.C.E.C.LarkinsMaier, M.M.MaierRalston, J.D.J.D.RalstonRosenzweig, JosefJosefRosenzweigWetzel, A.A.Wetzel2022-03-092022-03-091996https://publica.fraunhofer.de/handle/publica/326308High power InGaAs/GaAs tapered laser oscillators with a new type of carbon doping in the p-cladding layers grown by MBE are presented. In these devices carbon partially replaces the common beryllium p-dopant near the core region. SIMS depth profiles show, that the carbon doped layer serves as an efficient diffusion barrier for the beryllium in the p-cladding and contact layers. Thus, the previously observed severe beryllium redistribution from the p-cladding layer into the core region of the laser diodes is completely suppressed. In single quantum well (WQW) lasers this doping profile results in low internal losses of 2.6 cm(exp -1). Tapered laser oscillators show output powers as large as 7.2 watts an a maximum power conversion efficiency of 34 %.encarbon dopinghigh power laser diodeHochleistungslaserdiodeKohlenstoffdotierungMBE621667conference paper