Vogt, H.H.VogtZimmer, G.G.Zimmer2022-03-082022-03-081985https://publica.fraunhofer.de/handle/publica/314037A CMOS technology on implanted buried silicon nitride suitable for high density circuits is presented. Physical and electrical properties of the generated layers, their interfaces and fabricated devices are discussed. (IMS)en621Technology for VLSI devices on ion implanted buried silicon nitrideconference paper