Sakowicz, M.M.SakowiczLusakowski, J.J.LusakowskiKarpierz, K.K.KarpierzGrynberg, M.M.GrynbergKnap, W.W.KnapKöhler, KlausKlausKöhlerValusis, G.G.ValusisGolaszewska, K.K.GolaszewskaKaminska, E.E.KaminskaPiotrowska, A.A.Piotrowska2022-03-042022-03-042008https://publica.fraunhofer.de/handle/publica/21721610.1142/S0129156408005904Detection of THz radiation by a high electron mobility (HEMT) GaAs/GaAlAs transistor was investigated at 4 K as a function of the magnetic field B. The detection signal (a source - drain photovoltage appearing as a response to THz radiation) was found to be periodic in B(exp -1), i.e., it showed Shubnikow - de Haas oscillations. A Fourier transform of the signal showed a large amplitude component independent of the gate polarization, and a small amplitude component dependent on it. This shows that a HEMT response to the radiation cannot be described either by a plasma instability in gated ("shallow water") or in ungated ("deep water") parts of the channel, but rather by a response of the channel as a whole. This is in a good correspondence with recent experimental evidence of antenna effects in detection of radiation by HEMTs and advanced theoretical models of instability of coupled gated - ungated plasma in HEMTs.enIII-V semiconductorIII-V HalbleiterheterostructureHeterostrukturelectrical propertyelektrische Eigenschaft667journal article