Excitonic transitions in quantum wells composed of either binary or ternary III-V semiconductors grown by molecular beam epitaxy

Miguel, J.L. deJ.L. deMiguelOhmori, Y.Y.OhmoriStolz, W.W.StolzTapfer, L.L.TapferPloog, K.K.PloogWagner, J.J.Wagner2022-03-082022-03-081986https://publica.fraunhofer.de/handle/publica/314250enHalbleiterquantum wellsÜbergang(excitonisch)621667Excitonic transitions in quantum wells composed of either binary or ternary III-V semiconductors grown by molecular beam epitaxyconference paper