Kröner, F.F.KrönerSchork, R.R.SchorkFrey, L.L.FreyBurenkov, A.A.BurenkovRyssel, H.H.Ryssel2022-03-092022-03-092000https://publica.fraunhofer.de/handle/publica/336198Ion shower implantation (ISI) shows advantages of both ion implantation and plasma immersion doping and is, therefore, a promising alternative doping method for high dose and low energy implants. Applications of ion shower implantation to power electronics are demonstrated in this paper with special emphasis to low sheet- and contact resistance resulting in improved performance compared to conventional implantation.enion implantationlow energy implanthigh current implanterpower electronics670620530conference paper