Gibis, R.R.GibisSchelhase, S.S.SchelhaseSteingrüber, R.R.SteingrüberUrmann, G.G.UrmannKunzel, H.H.KunzelThiel, S.S.ThielStier, O.O.StierBimberg, D.D.Bimberg2022-03-032022-03-032000https://publica.fraunhofer.de/handle/publica/19841810.1016/S0022-0248(99)00605-32-s2.0-0034140087Quantum dots based on InP/GaInAs quantum wells were realised using epitaxial infill regrowth into a hole array formed in InP by means of e-beam lithography and reactive ion etching. Metal organic molecular beam epitaxy has been applied for selective infill growth. The growth procedure has been elaborated such that the vertical growth rate in predefined holes agrees with coherent growth and edge effects are minimised. Quantum dots formed in holes with a diameter ranging from 60 nm down to 30 nm in combination with a periodicity of 100 nm were studied. The achievement of quantum dots was evidenced by a blue shift of light emission with decreasing the geometrical quantum dot diameter, in qualitative agreement with calculations. Quantitative discrepancies were found because the effective lateral diameter of the quantum dots proved to be smaller than the geometrical value of the etched holes, caused by the lateral growth of the lower InP barrier.enelectron beam lithographygallium arsenideiii-v semiconductorsindium compoundsmolecular beam epitaxial growthphotoluminescencescanning electron microscopysemiconductor epitaxial layerssemiconductor growthsemiconductor quantum dotssputter etchingquantum dot formationquantum wellsepitaxial infill regrowthhole arrayreactive ion etchingmetalorganic molecular beam epitaxyselective infill growthvertical growth ratecoherent growth effectsedge effectsSEM30 to 100 nmInP-(gain)As621548journal article