Shuster-Passage, JenniferJenniferShuster-PassageAbdel Razek, SarahSarahAbdel RazekMattoo, MueenMueenMattooHauschildt, MeikeMeikeHauschildtChoi, SeungmanSeungmanChoiGall, MartinMartinGallKteyan, ArmenArmenKteyanChoy, Jun-HoJun-HoChoySukharev, ValeriyValeriySukharevKraatz, MatthiasMatthiasKraatzLloyd, JoeJoeLloyd2024-06-172024-06-172024https://publica.fraunhofer.de/handle/publica/46977810.1109/IRPS48228.2024.10529368The experimental determination of electromigration-induced critical stresses leading to void nucleation has been a complex endeavor across the past several decades. In this study, we propose a combination of single link electromigration testing, augmented by large scale statistical evaluations using Wheatstone Bridges, as well as detailed physics-based simulations to arrive at the extraction of the critical stresses which lead to void nucleation and further growth. The calibration efforts lead to well-matched values in terms of basic physical parameters such as effective diffusivity Deff , charge number Z∗ and effective modulus B . Furthermore, the statistical distribution of single link Kelvin structure and Wheatstone Bridge failure times is reproduced very well, ruling out an early nucleation mechanism close to the 4-sigma level. The calibration of the complex simulation model, based on a large experimental database, opens up the path to a much-improved chip-level reliability assessment process.enelectromigrationCu interconnectnucleationvoid growthcritical stressWheatstone Bridgeearly failurestatisticsconference paper