Lederer, MaximilianMaximilianLedererVogel, TobiasTobiasVogelKämpfe, ThomasThomasKämpfeKaiser, NicoNicoKaiserPiros, EszterEszterPirosRevello Olivo, Ricardo OrlandoRicardo OrlandoRevello OlivoAli, Tarek Nadi IsmailTarek Nadi IsmailAliPetzold, StefanStefanPetzoldLehninger, DavidDavidLehningerTrautmann, Christina K.Christina K.TrautmannAlff, LambertLambertAlffSeidel, KonradKonradSeidel2023-11-172023-11-172022https://publica.fraunhofer.de/handle/publica/45699110.1063/5.00989532-s2.0-85137051447The discovery of ferroelectric hafnium oxide enabled a variety of non-volatile memory devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of hafnium oxide based electronics in space or other high-dose environments requires an understanding of how these devices respond to highly ionizing radiation. Here, the effect of 1.6 GeV Au ion irradiation on these devices is explored, revealing a reversible phase transition, as well as a grain fragmentation process. The collected data demonstrate that non-volatile memory devices based on ferroelectric hafnia layers are ideal for applications where excellent radiation hardness is mandatory.enjournal article