Under CopyrightWeiss, CharlotteCharlotteWeissReichert, A.A.ReichertHofmann, J.J.HofmannJanz, StefanStefanJanz2022-03-1420.6.20192017https://publica.fraunhofer.de/handle/publica/40472210.1109/PVSC.2017.8366795We aimed to improve the properties of Si nanocrystal/SiC multilayers (ML) for the use as high bandgap solar cell absorber by the incorporation of oxygen (O). Therefore we compare the structural properties of Si nanocrystal/SiC ML with and without incorporated O by scanning electron microscopy, Raman spectroscopy and grazing incidence X-ray diffraction patterns. The O incorporation in the form of Si-O bonds was successful and a beneficial effect of O on the conservation of the ML structure during annealing and on the cSi/c-SiC ratio is observed and discussed in detail.enSilicium-MaterialMaterialien - Solarzellen und TechnologiePhotovoltaikIII-V und Konzentrator-PhotovoltaikIII-V Epitaxie und Solarzellen621697conference paper