Krause, SebastianSebastianKrauseQuay, RüdigerRüdigerQuay2024-01-032024-01-032023https://publica.fraunhofer.de/handle/publica/45838310.1109/IGARSS52108.2023.10282801We report on the design, fabrication, and characterization of an X-band 100-W Internally Matched FET (IMFET) designed for deployment in the Deep Space Antennas of the European Space Agency (ESA). The IMFET is based on high-voltage GaN dice, rated for a supply voltage of 100V and serves as a feasibility study of a currently developed 200-W device, which is planned to be integrated into a 5-kW prototype amplifier system covering the antennas’ uplink band, ranging from 7.145 to 7.235 GHz. Measurements at a drain-source voltage of 70V show an output power of more than 120W at a power-added efficiency of 44.1% and a transducer gain higher than 15 dB, all reached at a compression level of 1 dB.enGallium NitrideHEMTX-BandIMFETHigh Efficiency100 VDeep SpaceESAconference paper