Ralston, J.D.J.D.RalstonEisele, K.K.EiseleSah, R.E.R.E.SahFleissner, J.J.FleissnerBronner, WolfgangWolfgangBronnerHornung, J.J.HornungRaynor, B.B.Raynor2022-03-032022-03-031994https://publica.fraunhofer.de/handle/publica/18444610.1016/0961-1290(94)90070-1Researchers at the Fraunhofer Institute for Applied Solid-State Physics (IAF, Freiburg, Germany), working with Technics Plasma GmbH (Kirchheim, Germany), have developed a UHV CAIBE system specially designed for the fabrication of GaAs-based OEICs. The Fraunhofer team has also developed an enhanced CAIBE etching process which relaxes a number of constraints previously reported in the dry-etching of Al (ind x) Ga (ind 1-x) As-containing optoelectronic device structures.enhigh-speed data transmissionHochgeschwindigkeitsdatenübertragungmonolithic integrationmonolithische IntegrationOEICQW-laser621667537journal article