Rehm, RobertRobertRehmWalther, MartinMartinWaltherSchmitz, J.J.SchmitzFleißner, J.J.FleißnerFuchs, F.F.FuchsZiegler, J.J.ZieglerCabanski, W.W.Cabanski2022-03-102022-03-102005https://publica.fraunhofer.de/handle/publica/34780610.1117/12.627054The first fully operational mid-IR (3-5 µm) 256x256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detector chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement.eninfraredInfrarotfocal plane arrayBildfeldmatrixsuperlatticeÜbergitterGaSbthermal imagingThermographie621667conference paper