Thome, FabianFabianThomeLeuther, ArnulfArnulfLeutherAmbacher, OliverOliverAmbacher2022-03-062022-03-062020https://publica.fraunhofer.de/handle/publica/26106310.1109/LMWC.2019.2958209This letter presents the design and performance of two single-pole double-throw (SPDT) switches operating in V-band (50-75 GHz) and W-band (75-110 GHz). The millimeterwave (mmW) integrated circuits (MMICs) are fabricated in a 50-nm gate-length metamorphic high-electron-mobility transistor technology. Special attention was paid to the reduction of the insertion loss (IL). Thus, both switch MMICs achieve an IL of 1-1.6 dB (average 1.2 dB), covering the entire V-band and W-band, respectively. The isolation (ISO) of the switches is better than 31.6 and 28.5 dB, respectively. The input power for 1 dB of IL compression is at least 22 and 19 dBm, respectively. A wafer mapping of both circuits exhibits a high yield and low spread of IL and ISO. Based on the given results, the presented SPDT switch MMICs demonstrates state-of-the-art performance.enHigh-electron-mobility transistors (HEMTs)millimeter wave (mmW)mmW monolithic integrated circuits (MMICs)single pole double throw (SPDT)switchV-bandW-Band667530journal article