Maroldt, S.S.MaroldtAja, B.B.AjaRaay, Friedbert vanFriedbert vanRaayKrause, SebastianSebastianKrauseBrueckner, PeterPeterBruecknerQuay, RüdigerRüdigerQuay2022-03-132022-03-132013https://publica.fraunhofer.de/handle/publica/3901662-s2.0-84893438831A GaN high electron mobility transistor technology with a gate length of 0.25 m has been used to design and fabricate a cascode broadband low noise amplifier (LNA). The two-stage monolithic microwave integrated circuit (MMIC) with feedback topology yields a bandwidth of 0.5-3 GHz at a constant gain of 35 dB and noise figures of less than 1.5 dB. A third order intercept point (OIP3) of up to 42.5 dBm was measured at 0.8 GHz, with a linear output power of 24 dBm over the full bandwidth. The MMIC was further assembled and measured in a low-cost plastic QFN package on an evaluation board with optimized thermal design and passive cooling. At a power dissipation of 3 W the packaged LNA yields an OIP3 of 35-38 dBm over the full bandwidth at a noise figure of < 1.9 dB.enconference paper