Gerth, C.C.GerthDietz, R.J.B.R.J.B.DietzGöbel, T.T.GöbelSchell, M.M.SchellBrahm, A.A.BrahmNotni, G.G.NotniTünnermann, A.A.Tünnermann2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38231510.1109/IRMMW-THz.2013.66656062-s2.0-84893359355Broadband and sensitive Terahertz (THz) emitter and detector material is required to build cost-effective and mobile THz time-domain spectrometer systems (TDS). We present an efficient THz switch optimized for femtosecond lasers operating at the central wavelength of about 1060 nm. Performance is improved by a factor of 20 due to the implementation of mesa structuring and utilization of low temperature grown (LT) Bedoped InGaAs/InAlAs antenna material.enHighly efficient Terahertz photoconductive switch at 1060nm excitation wavelengthconference paper