Hackenberg, M.M.HackenbergPichler, P.P.PichlerHuet, K.K.HuetNegru, R.R.NegruVenturini, J.J.VenturiniPakfar, A.A.PakfarTavernier, C.C.TavernierLa Magna, A.A.La Magna2022-03-1120.12.20122012https://publica.fraunhofer.de/handle/publica/37615910.1016/j.apsusc.2012.01.13010.24406/publica-r-376159We present an enthalpy-based model for pulsed excimer laser annealing of crystalline silicon in the melting regime that integrates into the technology computer-aided design (TCAD) suite Sentaurus Process of Synopsys. The currently one-dimensional model includes laser absorption, a transient simulation of the heat flux, melting of the surface layer, and undercooling during recrystallization. To verify the model, its predictions for a laser pulse with a duration of 150 ns and a wavelength of 308 nm were compared to those of a phase-field implementation of melting laser annealing by La Magna et al. The two models show a good agreement for the melt depth, melt duration, and melt front dynamics. In a second step, model predictions were compared to melt depths extracted from SIMS measurements of ion implanted and excimer-laser-annealed silicon samples. They were found to agree within the experimental error. Variation of the beam parameters indicated a strong influence of lase r energy density fluctuations on the melt depth.en670669conference paper