Hamacher, M.M.HamacherKaiser, R.R.KaiserHeidrich, H.H.HeidrichAlbrecht, P.P.AlbrechtBorchert, B.B.BorchertJaniak, K.K.JaniakLöffler, R.R.LöfflerMalchow, S.S.MalchowRehbein, W.W.RehbeinSchroeter-Janssen, H.H.Schroeter-Janssen2022-03-092022-03-092000https://publica.fraunhofer.de/handle/publica/33673410.1109/ICIPRM.2000.8502202-s2.0-0033707553This paper reports on 1.3 mu m complex coupled DFB lasers, 1.55 mu m (wavelength selective) photodiodes and passive spot size converters integrated with Y-shaped waveguide structures on InP, developed for further monolithic integration purposes. The characteristics of such IC subintegrations are similar to those of comparable, separately fabricated devices. Results on first somewhat more complex monolithic Y-junction 1.3 mu m/1.5 mu m transmitter/receiver ICs are presented.endistributed feedback lasersgallium arsenideiii-v semiconductorsindium compoundsintegrated opticsoptical waveguidesphotodiodestransceiversmonolithic integrationwavelength selective photodiodewaveguide y-junctionspot size converterGaInAsP/InP photonic iccomplex coupled dfb laseroptical transceiver1.3 micron1.55 micronGaInAsP-InP621conference paper