Heijden, M.P. van derM.P. van derHeijdenAcar, M.M.AcarMaroldt, S.S.Maroldt2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38054910.1109/MWSYM.2013.66973472-s2.0-84893316056A 50 W CMOS-GaN class-E power amplifier in a package is presented. The class-E operated GaN HEMT power bar switches are driven by a high speed, high voltage CMOS power bar driver chip, implemented in a standard 65 nm process technology. The proposed switch-mode power amplifier demonstrates 76% line-up efficiency and 85% GaN drain efficiency at 2.14 GHz, including the losses of the matching network in the package. To the authors knowledge this is the world's first package-integrated CMOS-GaN power amplifier that could enable digital transmitter architectures based on true switch-mode power amplifier blocks.enbase stationCMOSclass-Edigital transmitterdrain efficiencyGaNswitch mode power amplifier667conference paper