Viegas, Alison ErleneAlison ErleneViegasEverding, MaximilianMaximilianEverdingFalidas, Konstantinos EfstathiosKonstantinos EfstathiosFalidasLederer, MaximilianMaximilianLedererCzernohrosky, MalteMalteCzernohroskyHeitmann, JohannesJohannesHeitmann2025-02-252025-02-252023https://publica.fraunhofer.de/handle/publica/48424710.1109/IIRW59383.2023.10477698Antiferroelectric-like capacitors are of high interest for on-chip energy storage. This paper studies the conduction mechanisms of antiferroelectric-like aluminum doped hafnium oxide metal-insulator-metal 3-dimensional capacitors in order to select an appropriate lifetime extrapolation model for TDDB measurement data by verifying the model parameters. These capacitors are tested for Generalized Trap-Assisted Tunneling conduction mechanisms through two different leakage current experiments. An appropriate lifetime extrapolation model is selected from the conduction mechanisms, by introducing a novel analysis method and parameter extraction.enantiferroelectricMIM capacitorsTDDBTATleakageconduction mechanismHfO23D CapacitorsExtrapolationHafnium oxideconference paper