Finite element modeling and raman study of strain distribution in patterned device islands on strained silicon-on-insulator (sSOI) substrates

Gu, D.D.GuBaumgart, H.H.BaumgartNaumann, F.F.NaumannPetzold, M.M.Petzold2022-03-112022-03-112011https://publica.fraunhofer.de/handle/publica/371528en620Finite element modeling and raman study of strain distribution in patterned device islands on strained silicon-on-insulator (sSOI) substratesconference paper