Solomko, ValentynValentynSolomkoHsu, Ting-LiTing-LiHsuSyroiezhin, SemenSemenSyroiezhinHagelauer, AmelieAmelieHagelauer2025-01-022025-01-022024-09-23https://publica.fraunhofer.de/handle/publica/48096210.23919/EuMIC61603.2024.10732532A series switch arrangement constructed from stacked MOS transistors and capable of handling high-voltage DC and RF signals is presented in the paper. The result is achieved by using three switch branches, each comprising a resistive bias network that provides uniform voltage division in the stack at DC and AC. A hardware prototype implemented in a 90nm SOI-CMOS process with 3V transistors demonstrated DC voltage handling of ±14V and RF handling of 16V peak with IIP 3 =74dBm at 1GHz, insertion loss and isolation of 0.19dB and 55dB respectively, and 0.1dB insertion loss bandwidth of over 4GHz.enanalog switchCMOS switchhigh-voltagelinear switchseries switchstacked switchtunable devicesconference paper